IRF510STRLPBF【PDF 1/9 页】MOSFET N-CH 100V 5.6A D2PAK

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IRF510S, SiHF510S

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

FEATURES

? Halogen-free According to IEC 61249-2-21

V DS (V)

R DS(on) ( ? )

Q g (Max.) (nC)

Q gs (nC)

Q gd (nC)

Configuration

D 2 PAK (TO-263)

V GS = 10 V

100

8.3

2.3

3.8

Single

0.54

Definition

? Surface Mount

? Available in Tape and Reel

? Dynamic dV/dt Rating

? Repetitive Avalanche Rated

? 175 °C Operating Temperature

? Fast Switching

? Ease of Paralleling

? Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design,

low on-resistance and

cost-effectiveness.

The D 2 PAK (TO-263) is a surface mount power package

capable of accommodating die sizes up to HEX-4. It

provides the highest power capability and the lowest

G D

N-Channel MOSFET

possible on-resistance in any existing surface mount

package. The D 2 PAK (TO-263) is suitable for high current

applications because of its low internal connection

resistance and can dissipate up to 2.0 W in a typical surface

mount application.

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

D 2 PAK (TO-263)

SiHF510S-GE3

IRF510SPbF

SiHF510S-E3

D 2 PAK (TO-263)

SiHF510STRL-GE3 a

IRF510STRLPbF a

SiHF510STL-E3 a

D 2 PAK (TO-263)

SiHF510STRR-GE3 a

IRF510STRRPbF a

SiHF510STR-E3 a

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

SYMBOL

V DS

V GS

LIMIT

100

± 20

UNIT

Continuous Drain Current

V GS at 10 V

T C = 25 °C

T C = 100 °C

I D

5.6

4.0

Pulsed Drain Current a

I DM

Linear Derating Factor

Linear Derating Factor (PCB Mount) e

0.29

0.025

W/°C

Single Pulse Avalanche Energy b

Avalanche Current a

Repetitive Avalanche Energy a

E AS

I AR

E AR

100

5.6

4.3

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount) e

Peak Diode Recovery dV/dt c

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T C = 25 °C

T A = 25 °C

for 10 s

P D

dV/dt

T J , T stg

3.7

5.5

- 55 to + 175

300 d

V/ns

°C

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V DD = 25 V, starting T J = 25 °C, L = 4.8 mH, R g = 25 ? , I AS = 5.6 A (see fig. 12).

c. I SD ? 5.6 A, dI/dt ? 75 A/μs, V DD ? V DS , T J ? 175 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91016

S11-1044-Rev. C, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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